c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 www. ruichips .com ru 40 19 0 q2 n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 40 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperatur e range - 55 to 175 c i s diode continuous forward current t c =25 c 19 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 76 0 a i d continuous drain current ( v gs =10v) t c =25 c 19 0 a t c =100 c 1 46 p d maximum power dissipation t c =25 c 3 12 w t c = 100 c 1 56 w r q jc thermal resistance - junction to case 0. 48 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 812 m j ? 40 v/ 19 0 a, r ds ( on ) = 2. 5 m ( t y p .)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs complia nt) ? dc - dc converters and off - line ups ? switching applications absolute maximum ratings n - channel mosfe t to - 3p
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 2 www. ruichips .com ru 40 19 0 q2 electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 40 19 0 q2 unit min. typ. max. static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 40 v i dss zero gate voltage drain current v ds = 40 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 7 5 a 2. 5 3.5 m w notes : calculated continuous current based on maximum allowable junction temperature . package limitation current is 90 a. pulse width limited by safe operating area. limited by t jmax , i as = 57 a, v dd = 32 v, r g = 50 , starting t j = 2 5c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 7 5 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 7 5 a, dl sd /dt=100a/ m s 40 ns q rr reverse recovery charge 5 2 nc dynamic charac teristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 2 w c iss input capacitance v gs =0v, v ds = 20 v, frequency=1.0mhz 4 8 0 0 pf c oss output capacitance 9 5 0 c rss reverse transfer capacitance 48 0 t d ( on ) turn - on delay time v dd = 20 v, r l = 0.3 w , i ds = 7 5 a , v gen =10v, r g = 2.5 w 19 ns t r turn - on rise time 9 6 t d ( off ) turn - off delay time 70 t f turn - off fall time 5 0 gate charge characteristics q g total gate charge v ds = 3 2 v, v gs =10v, i ds = 7 5 a 120 nc q gs gate - source charge 34 q gd gate - drain charge 46
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 3 www. ruichips .com ru 40 19 0 q2 typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltag e (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 4 www. ruichips .com ru 40 19 0 q2 typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 5 www. ruichips .com ru 40 19 0 q2 typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 6 www. ruichips .com ru 40 19 0 q2 avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 7 www. ruichips .com ru 40 19 0 q2 ordering and marking information device marking package packaging quantity reel size tape width ru 40 19 0 q2 ru 40 19 0 q2 to - 3p tube 3 0 - -
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 8 www. ruichips .com ru 40 19 0 q2 package information to3p package outline symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.60 4.80 5.00 0.181 0.189 0.197 h 0.05 0.10 0.15 0.002 0.004 0.006 a1 1.40 1.50 1. 60 0.055 0.059 0.063 l 7.40 typ 0.291 typ a2 1.33 1.38 1.43 0.052 0.054 0.056 l1 9.00 typ 0.354 typ b 0.80 1.00 1.20 0.031 0.039 0.047 l2 11.00 typ 0.433 typ b1 2.80 3.00 3.20 0.110 0.118 0.126 l3 1.00 ref 0.039 ref b2 1.80 2.00 2.20 0.071 0.079 0.087 ?p 6.90 7.00 7.10 0.272 0.276 0.280 c 0.50 0.60 0.70 0.020 0.024 0.028 ?p1 3.20 ref 0.126 ref d 19.75 19.90 20.05 0.778 0.783 0.789 ?p 2 3.50 ref 0.138 ref d1 13.70 13.90 14.10 0.539 0.547 0.555 ?p 3 1.40 1.50 1.60 0.055 0.059 0.063 d2 12.90 ref 0.508 r ef r 0.50 ref 0.020 ref e 15.40 15.60 15.80 0.606 0.614 0.622 q 5.00 ref 0.197 ref e1 13.40 13.60 13.80 0.528 0.535 0.543 q1 12.56 12.76 12.96 0.494 0.502 0.510 e2 9.40 9.60 9.80 0.370 0.378 0.386 u 7.80 8.00 8.20 0.307 0.315 0.323 e 5.45 typ 0.2 15 typ 1 5 7 9 5 7 9 g 4.60 4.80 5.00 0.181 0.189 0.197 2 1 3 5 1 3 5 h 40.30 40.50 40.70 1.587 1.594 1.602 3 60 ref 60 ref h1 23.20 23.40 23.60 0.913 0.921 0.929
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 9 www. ruichips .com ru 40 19 0 q2 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
